There is a constant desire to increase the speed of performance of such circuits while maintaining an overall constant current. The present invention is particularly suited to an advanced bipolar technology, hereinafter referred to as bipolar VLSI, as described in an article entitled Advanced Bipolar VLSI Technology, appearing on pages 109 through 136 of “Semiconductor International” magazine, published March 1990.īJTs are often used as active elements in high frequency circuits, as in satellite communications, radar, television, etc. Accordingly, the term BJT will be used herein, but is intended to include all such devices which are capable of controlling an electrical current by means of electron or hole conduction. The present invention is applicable to a wide variety of BJTs that are fabricated on monocrystalline, polycrystalline, or amorphous semiconductor material. Wiedman et al., which is assigned to the same assignee of the present invention. 5,221,017 entitled High Gain, High Efficiency Heterojunction Bipolar Transistors to Richard R.
The present invention pertains generally to the field of integrated circuit fabrication and, more particularly, to a method of fabricating high performance bipolar junction transistors, hereinafter referred to as Bipolar Junction Transistors or BJTs, such as the BJT disclosed in U.S. It is available in two editions, 32x and 64x with 3.9GB and 7.2GB size respectively. Allplan 2013 is the latest version of this excellent product.
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